| PART |
Description |
Maker |
| PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| STP190N55LF3 |
N-channel 55 V, 2.9 miliohm, 120 A, TO-220
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| STP200N6F3 STB200N6F3 STB200N6F3TRL |
120 A, 60 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET Power MOSFET
|
STMicroelectronics
|
| FDMA1027PT |
Dual P-Channel PowerTrench? MOSFET -20 V, -3 A, 120 mΩ
Dual P-Channel PowerTrench㈢ MOSFET -20 V, -3 A, 120 mヘ
|
Fairchild Semiconductor
|
| IRF1405ZL-7PPBF IRF1405ZSTRL-7PPBF IRF1405ZS-7PPBF |
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CA LEAD FREE, PLASTIC PACKAGE- 7
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, D2PAK-7
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET D2PAK-7
|
Analog Devices, Inc.
International Rectifier, Corp.
ITT, Corp.
|
| BUK661R6-30C |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| FDMS8018 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30 V, 120 A, 1.8 mΩ
|
Fairchild Semiconductor
|
| TDA8924TH TDA8924TH/N2518 |
120 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24
2 x 120 W class-D power amplifier
2 x 120 W class-D power amplifier
|
NXP Semiconductors
|
| 70555-0015 0705550015 |
2.54mm (.100) Pitch SL Header, Single Row, Right Angle, .120 Pocket, Shrouded,
2.54mm (.100) Pitch SL?/a> Header, Single Row, Right Angle, .120 Pocket, Shrouded,
|
Molex Electronics Ltd.
|
| AQW214EHA AQW214EH AQW214EHAX AQW214EHAZ AQW210EHA |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Through hole terminal.
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 1/2/3/4-pin side.
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. Picked from the 1/2/3/4-pin side.
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. Picked from the 5/6/7/8-pin side.
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 5/6/7/8-pin side.
GU (General Use)-E Type 2-Channel (Form A) Type 顾（一般使用）- E通道（A型）
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Through hole terminal.
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
Electronic Theatre Controls, Inc.
|
| SDR952CT_3 SDR951CT_3 SDR950CT_3 SDR950CT-3 SDR952 |
120 AMP 100 - 200 VOLTS 35 nsec HYPER FAST COMMONCATHODE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
|
